Features ? Enhancement mode ? Low RDS(on) to minimize conduction losses ? VitoMOS? Ⅱ Technology ? 100 Avalanche Tested ? Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses

Symbol Parameter Rating UnitV(BR)DSS Drain-Source breakdown voltage 60 VVGS Gate-Source voltage ±20 VIS Diode continuous forward current (Wire bond limited) TC= 25°C180 AID Continuous drain current @VGS=10V (Wire bond limited) TC= 25°C180 AID Continuous drain current @VGS=10V (Wire bond limited) TC= 100°C141 AIDM Pulse drain current tested ① TC =25°C800 AIDSM Continuous drain current @VGS=10V TA=25°C 20 ATA=70°C 16 AEAS Maximum Avalanche energy, single pulsed ② 289 mJPD Maximum power dissipation ③ TC =25°C214 WPDSM Maximum power dissipation ④ TA=25°C 2.1 WTJ,TSTG Operating Junction and Storage Temperature Range -55 to 175 °CThermal Characteristics Symbol Parameter Typical Max UnitRθJC Thermal Resistance, Junction-to-Case ⑤ 0.6 0.7 °C/WRθJA Thermal Resistance, Junction-to-Ambient ⑥ 50 60 °C/W

V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 -- -- VIDSS Zero Gate Voltage Drain Current(Tj=25℃) VDS=60V,VGS=0V -- -- 1 μAZero Gate Voltage Drain Current(Tj=125℃)⑦ VDS=60V,VGS=0V -- -- 100 μAIGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nAVGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.8 2.4 VRDS(on) Drain-Source On-State Resistance ⑧ VGS=10V, ID=40A -- 2.2 2.75 mΩ(Tj=100℃) ⑦ -- 3.2 -- mΩRDS(on) Drain-Source On-State Resistance ⑧ VGS=4.5V, ID=30A -- 3.3 4.3 mΩDynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance ⑦ VDS=30V,VGS=0V, f=100KHz -- 3180 -- pFCoss Output Capacitance ⑦ -- 895 -- pFCrss Reverse Transfer Capacitance ⑦ -- 30 -- pFRg Gate Resistance ⑦ f=1MHz -- 1 -- ΩQg(10V) Total Gate Charge ⑦ VDS=30V,ID=40A, VGS=10V -- 52 -- nCQg(4.5V) Total Gate Charge ⑦ -- 26 -- nCQgs Gate-Source Charge ⑦ -- 9.8 -- nCQgd Gate-Drain Charge ⑦ -- 9.5 -- nCSwitching Characteristics ⑦ Td(on) Turn-on Delay Time VDD=30V, ID=40A, RG=3Ω, VGS=10V -- 11-- nsTr Turn-on Rise Time -- 62-- nsTd(off) Turn-Off Delay Time -- 40-- nsTf Turn-Off Fall Time -- 47-- nsSource- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.83 1 VTrr Reverse Recovery Time ⑦ VDD=30V Isd=40A, VGS=0Vdi/dt=100A/μs -- 43 -- nsQrr Reverse Recovery Charge ⑦ -- 36 -- nC