VS7N65AF 威兆 TO-220 VANGUARD 电源保护板 无线充 PD快充 锂电保

VS7N65AF? SLF7N65 SLF8N65? SLF12N65等

专业LED驱动IC及配套MOS行家: 13418531057(微信同号) 胡蓝丹

650V/7A N-Channel Advanced Power MOSFET

Part ID Package Type Marking Tape and reel inbation VS7N65AF TO-220F 7N65AF 50pcs/Tube

Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 650 V VGS Gate-Source voltage ±30 V S I Diode continuous forward current TC =25°C 7 A D I Continuous drain current @VGS=10V TC =25°C 7 A TC =100°C 4.4 A DM I Pulse drain current tested ① TC =25°C 28 A IDSM Continuous drain current @VGS=10V TA=25°C 0.9 A TA=70°C 0.7 A EAS Avalanche energy, single pulsed ② 660 mJ PD Maximum power dissipation TC =25°C 28 W PDSM Maximum power dissipation ③ TA=25°C 2 W MSL Level 3 TSTG ,TJ Storage and Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameter Typical Unit R?JC Thermal Resistance, Junction-to-Case 4.5 °C/W R?JA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 650 720 -- V DSS I Zero Gate Voltage Drain Current VDS=650V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=520V,VGS=0V -- -- 50 μA GSS I Gate-Body Leakage Current VGS=±30V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 2.8 3.3 3.8 V RDS(ON) Drain-Source On-State Resistance④ VGS=10V, ID=3.5A -- 1.1 1.35 Ω Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance VDS=30V,VGS=0V, f=1MHz 950 1070 1200 pF Coss Output Capacitance 30 85 140 pF Crss Reverse Transfer Capacitance 15 60 pF Rg Gate Resistance f=1MHz -- 3.9 -- Ω Qg Total Gate Charge VDS=520V,ID=7A, VGS=10V -- 24 -- nC Qgs Gate-Source Charge -- 7 -- nC Qgd Gate-Drain Charge -- 8 -- nC Switching Characteristics d(on) t Turn-on Delay Time VDD=350V, ID=7A, RG=25Ω, VGS=10V -- 21 -- ns r t Turn-on Rise Time -- 15 -- ns d(off) t Turn-Off Delay Time -- 67 -- ns f t Turn-Off Fall Time -- 39 -- ns Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=7A,VGS=0V -- 0.9 1.2 V rr t Reverse Recovery Time Tj=25℃,Isd=7A, VGS=0V di/dt=100A/μs -- 360 -- ns Qrr Reverse Recovery Charge 2.3 uC NOTE: ① Repetitive rating; pulse b limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 27mH, RG = 25Ω, IAS = 7A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse b ≤ 300μs; duty cycle≤ 2.

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